Semiconductor memory for disconnecting a bit line from a...

Details Semiconductor memory for disconnecting a bit line from a... Semiconductor memory for disconnecting a bit line from a...

2007-07-24

2010-02-09

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Addressing

Plural blocks or banks

C365S200000, C365S203000, C365S222000, C365S229000

Reexamination Certificate

active

07660184

ABSTRACT:
Each memory block has a plurality of memory cells, and word lines and bit lines connected to the memory cells. Precharge switches connect the bit lines to a precharge line. A switch control circuit controls an operation of the precharge switches and sets a cutoff function that turns off connection switches in a standby period in which no access operation of the memory cells is performed. Since connections of the bit lines and the precharge switch and those of the bit lines and the sense amplifier are cut off in the standby period, if a short circuit failure is present between a word line and a bit line, a leak current can be prevented from flowing from the word line to a precharge voltage line and so on.

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