Semiconductor memory elements

Details Semiconductor memory elements Semiconductor memory elements

1972-07-26

1976-04-20

James, Andrew J.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 24, 357 59, 307304, 340173R, H01L 2978

Patent

active

039523250

ABSTRACT:
A semiconductor memory element comprising a semiconductor substrate and an insulating layer thereon, a charge storage element located on a portion of the insulating layer and separated from the semiconductor substrate, and first device means for injecting hot electrons from the semiconductor substrate into the insulating layer portion to write a first charge state on the charge storage element and second device means for injecting hot holes from the semiconductor substrate into the insulating layer portion to write a second charge state on the charge storage element.

REFERENCES:
patent: 3462657 (1969-08-01), Brown
patent: 3728695 (1973-04-01), Frohman-Bentchkowsky
Applied Physics Letters, "Avalanche Injection Currents & Charging Phenomena in Thermal SiO.sub.2 " by Nicollian et al., pp. 174-177, Sept. 1969.
IBM Tech. Discl. Bul., "Floating Avalanche-Injection Metal-Oxide Semiconductor Device With Low-Write Voltage" by Terman, p. 3721 May 1972.

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