Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2007-05-22
2007-05-22
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257S922000
Reexamination Certificate
active
10516336
ABSTRACT:
An example memory includes an address control portion, a protection film, a property deterioration material layer, data storage areas, and bonding pads. The protection film protects an organic semiconductor layer of a semiconductor circuit and prevents intrusion of moisture or chemical molecules in the air, light, or the like, into the organic semiconductor layer. Deterioration of the organic semiconductor layer is started by breaking the protection film and using a specified means, thus starting operation of the lifetime period. The property deterioration material layer contains a material for deteriorating the property of the organic semiconductor and deterioration of the organic semiconductor layer is started, for example, by diffusing the material into the organic semiconductor layer.
REFERENCES:
patent: 61-115297 (1986-06-01), None
patent: 5-159592 (1993-06-01), None
patent: 10-222426 (1998-08-01), None
Kuroda Kazuo
Yanagisawa Shuuichi
Crane Sara
Nixon & Vanderhye PC
Pioneer Corporation
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