Semiconductor memory devices

Details Semiconductor memory devices Semiconductor memory devices

2007-01-02

2007-01-02

Zarabian, Amir (Department: 2827)

Static information storage and retrieval

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C365S189060, C365S189090, C365S189110, C365S229000, C365S230030, C365S230060

Reexamination Certificate

active

11001004

ABSTRACT:
Semiconductor memory devices. A semiconductor memory device includes a booster circuit generating a predetermined power voltage exceeding an external power voltage, a global power line supplying the predetermined power voltage, and a plurality of memory blocks. Each memory block has a local power line, a plurality of functional circuits coupled to the local power lines and a voltage control device coupled between the global power line and the local power line. The voltage control device outputs the predetermined power voltage or a first voltage to the functional circuits through the local power line in a first period and a second period respectively, according to a select signal, wherein the first voltage exceeds the external power voltage but is lower than the predetermined power voltage.

REFERENCES:
patent: 5999475 (1999-12-01), Futatsuya et al.
patent: 6512715 (2003-01-01), Okamoto et al.
patent: 6724648 (2004-04-01), Khellah et al.
patent: 2004/0027906 (2004-02-01), Itou

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