Semiconductor memory devices

Details Semiconductor memory devices Semiconductor memory devices

1977-06-09

1978-07-25

Edlow, Martin H.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 3, 357 4, 357 88, 357 30, 307238, 365114, 365215, H01L 29161

Patent

active

041033124

ABSTRACT:
A semiconductor memory (storage) device is provided using layered semiconductor structures which produce spatially separate electron and hole wells. The state of the device depends upon whether or not charge carriers (electrons and holes) are confined in these wells. Thus, the device has a first state exhibiting one conductance or capacitance when the wells do not have charge carriers in them, and a second state (different conductance or capacitance) when charge carriers are confined in the potential wells. The lifetime of the state in which carriers are confined in the wells depends upon the amount of time required for electron-hole recombination and is expected to be very long since the electrons and holes are spatially separated. A preferred embodiment utilizes a layered heterostructure formed in the space charge region of a p-n junction. Electrons and holes are generated in the potential wells using either electrical injection or incident light, while reading is accomplished by measuring conductance or capacitance. Erasure of the device state is achieved by a reverse electrical bias which removes the electrons and holes from confinement in the potential wells. Confinement of electrons and holes in three dimensions is also achieved.

REFERENCES:
patent: 3626257 (1971-12-01), Esaki
patent: 3626328 (1971-12-01), Easki
patent: 3721583 (1973-03-01), Blakeslee
patent: 3872400 (1972-07-01), Glauseher
patent: 3882533 (1975-05-01), Dohler
patent: 3893148 (1975-07-01), Madjid
patent: 3929527 (1975-12-01), Chang
Esaki et al, Thin Solid Films, 36 (1976) pp. 289-298.
Chang et al, J. Voc. Sci. Technol., vol. 10, No. 1, Jan./Feb. 1973, pp. 11-16.
Chang et al, J. Voc. Sci. Technol. vol. 10, No. 5, Sep./Oct. 1973, pp. 655-662.
Blakeslee, I.B.M. Tech. Discl. Bull., vol. 14, No. 2, Jul. 1971, pp. 539-541.

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