Semiconductor memory device with word lines adjacent and non-int

Details Semiconductor memory device with word lines adjacent and non-int Semiconductor memory device with word lines adjacent and non-int

1989-02-22

1990-10-02

Jackson, Jr., Jerome

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 55, 357 51, 365182, 365186, H01L 2978, H01L 2906

Patent

active

049610953

ABSTRACT:
A grooved separating region 112 having information electric charge storing capacitances C.sub.P formed on side surfaces thereof is formed to extend the region between the adjacent word line 107 in parallel with the word line 107. As a result, the grooved separating region 112 does not contact the channel region 111 of the gate transistors and does not intersect the word line 107.

REFERENCES:
patent: 4586171 (1986-04-01), Fujishima
patent: 4604639 (1986-08-01), Kinoshita
patent: 4606011 (1986-08-01), Wada
patent: 4688064 (1987-08-01), Ogura et al.
1985 IEEE International Solid-State Circuits Conference Digest of Technical Papers (Feb. 15, 1985) pp. 244, 245.

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