Semiconductor memory device with trench surrounding each memory

Details Semiconductor memory device with trench surrounding each memory Semiconductor memory device with trench surrounding each memory

1985-07-09

1987-06-09

Munson, Gene M.

357 2311, 357 41, 357 55, 357 59, H01L 2978, H01L 2702, H01L 2906, H01L 2904

Patent

active

046724109

ABSTRACT:
A semiconductor device has memory cells respectively located at intersections of bit and word lines arranged in a matrix form, each of the memory cells being constituted by a single insulated gate transistor and a single capacitor. One memory cell is formed in an element formation region defined by each of trenches arranged in a matrix form. The capacitor has an insulating film formed along part of a side wall surface of a trench formed in at least a direction of thickness of a semiconductor substrate and a conductive layer formed along the insulating film. The transistor has a gate insulating film adjacent to the capacitor and formed along a remaining portion of the side wall surface of the trench, a gate electrode formed along the gate insulating film, and a diffusion region formed in a major surface of the semiconductor substrate which is adjacent to the gate insulating film. The semicondcutor memory device further has an isolation region between two adjacent ones of the memory cells along two adjacent ones of the bit or word lines. A method of manufacturing the semiconductor is also proposed.

REFERENCES:
patent: 4353086 (1982-10-01), Jaccodine et al.
"Depletion Trench Capacitor Technology for Megabit Level MOS dRAM" by T. Morie, K. Minegishi and S. Nakajima, IEEE Electron Device Letters, vol. EDL-4, No. 11, Nov. 1983.
"A Corrugated Capacitor (ell CCC) for Magabit Dynamic MOS Memories" by H. Sunami et al., IEEE Electron Device Letters, vol. EDL-4, No. 4, Apr. 1983, pp. 90-91.
"A Submicron CMOS Megabit Level RAM Technology Using Doped Face Trench Capacitor Cell" by K. Minegishi et al., reprinted from Proceedings of the IEEE International Electron Devices Meeting, Dec. 1983, pp. 319-322.

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