Semiconductor memory device with sense amplifier

Details Semiconductor memory device with sense amplifier Semiconductor memory device with sense amplifier

2005-04-12

2005-04-12

Lebentritt, Michael S. (Department: 2824)

Static information storage and retrieval

Addressing

Plural blocks or banks

C365S063000

Reexamination Certificate

active

06879539

ABSTRACT:
A semiconductor memory device that can be reduced in chip area while preventing degradation in characteristic is obtained. In DRAM, a plurality of memory cell array regions are arranged in matrix, spaced apart from each other in a row direction and in a column direction, on a semiconductor substrate. A sense amplifier region is arranged in a gap between the memory cell array regions in the column direction. An element forming a sense amplifier is arranged in the sense amplifier region. A subdecoder region is arranged in a gap between the memory cell array regions in the row direction. A cross region is arranged at an intersection of the sense amplifier regions in line and the subdecoder regions in line. A sense amplifier driver element is arranged in the subdecoder region and used in a sense amplifier operation.

REFERENCES:
patent: 6226208 (2001-05-01), Nakai et al.
patent: 6288925 (2001-09-01), Kitsukawa et al.
patent: 9-64308 (1997-03-01), None
patent: 2000-22108 (2000-01-01), None

Affiliated with

Also associated with

Rating

Semiconductor memory device with sense amplifier does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device with sense amplifier, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device with sense amplifier will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3409486