Semiconductor memory device with reduced leak current

Static information storage and retrieval – Powering – Data preservation

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S230060

Reexamination Certificate

active

07099225

ABSTRACT:
A semiconductor memory device includes a memory cell array, a decoder circuit configured to assert a decoding signal for selecting an access position in the memory cell array in response to an address signal supplied from an exterior, and a first circuit configured to put the decoding signal of the decoder circuit in an asserted state regardless of a value of the address signal in response to assertion of a standby signal supplied from the exterior.

REFERENCES:
patent: 5703825 (1997-12-01), Akiba et al.
patent: 5712823 (1998-01-01), Gillingham
patent: 5717650 (1998-02-01), Chung et al.
patent: 5914905 (1999-06-01), Hikichi et al.
patent: 6414363 (2002-07-01), Mizuguchi
patent: 410031889 (1998-02-01), None
patent: 10-275465 (1998-10-01), None
patent: 410275465 (1998-10-01), None
patent: 2001-143477 (2001-05-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor memory device with reduced leak current does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device with reduced leak current, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device with reduced leak current will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3699373

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.