Semiconductor memory device with reduced current consumption

Static information storage and retrieval – Powering – Conservation of power

Reexamination Certificate

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Details

C365S189090, C365S226000, C365S229000

Reexamination Certificate

active

07633825

ABSTRACT:
A semiconductor memory device includes a DRAM memory core circuit including a word line, a power supply circuit configured to operate in a selected one of a first state and a second state to generate a predetermined power supply voltage for provision to the DRAM memory core circuit, the power supply circuit consuming a larger electric current in the first state than in the second state, and a control circuit configured to control the power supply circuit such that the power supply circuit is shifted from the first state to the second state, and is then brought back to the first state during a period from activation of the word line to deactivation of the word line.

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patent: 7251169 (2007-07-01), Takeuchi
patent: 07108186.3 (2007-11-01), None
patent: 07-105682 (1995-04-01), None

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