Semiconductor memory device with reduced current consumption...

Details Semiconductor memory device with reduced current consumption... Semiconductor memory device with reduced current consumption...

2005-02-01

2005-02-01

Mai, Son (Department: 2818)

Static information storage and retrieval

Powering

Conservation of power

C365S230030, C365S222000

Reexamination Certificate

active

06850454

ABSTRACT:
Data indicating whether a short-circuit defect exists in a memory block is programmed a fuse program circuit. In accordance with the fuse program data and a mode instruction signal, the correspondence relationship between a block select signal and a corresponding bit line isolation instruction signal is switched by a circuit that generates the bit line isolation instruction signal in a specific mode. It becomes possible to isolate the memory block in which a leakage current path exists from a corresponding sense amplifier band in a specific operation mode. Current consumption at least at a standby state is reduced.

REFERENCES:
patent: 5251176 (1993-10-01), Komatsu
patent: 6058061 (2000-05-01), Ooishi
patent: 6091659 (2000-07-01), Watanabe et al.
patent: 6563748 (2003-05-01), Hidaka
patent: 6-28856 (1994-02-01), None
patent: 9-83266 (1997-03-01), None

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