Patent
1991-02-04
1993-03-23
Hille, Rolf
357 42, 357 45, H01L 2978
Patent
active
051969106
ABSTRACT:
A semiconductor memory wherein a memory cell region having a plurality of memory cells and a relatively high altitude above the surface of semiconductor substrate is formed at a recessed part of the semiconductor substrate having the recessed part and a projected part, and wherein a peripheral circuit region having a comparatively low altitude from the surface of the semiconductor substrate is formed at the projected part of the semiconductor substrate.
REFERENCES:
patent: 4675716 (1987-06-01), Jones
patent: 4677739 (1987-07-01), Doering et al.
patent: 4696092 (1987-09-01), Doering et al.
patent: 4845544 (1989-07-01), Shimizu
patent: 4906588 (1990-03-01), Harrington, III
patent: 4929565 (1990-05-01), Parrillo
Hasegawa Norio
Kaga Toru
Kawamoto Yoshifumi
Kimura Shin-Ichiro
Kure Tokuo
Hille Rolf
Hitachi , Ltd.
Loke Steven
LandOfFree
Semiconductor memory device with recessed array region does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory device with recessed array region, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device with recessed array region will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1356043