Semiconductor memory device with recessed array region

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357 42, 357 45, H01L 2978

Patent

active

051969106

ABSTRACT:
A semiconductor memory wherein a memory cell region having a plurality of memory cells and a relatively high altitude above the surface of semiconductor substrate is formed at a recessed part of the semiconductor substrate having the recessed part and a projected part, and wherein a peripheral circuit region having a comparatively low altitude from the surface of the semiconductor substrate is formed at the projected part of the semiconductor substrate.

REFERENCES:
patent: 4675716 (1987-06-01), Jones
patent: 4677739 (1987-07-01), Doering et al.
patent: 4696092 (1987-09-01), Doering et al.
patent: 4845544 (1989-07-01), Shimizu
patent: 4906588 (1990-03-01), Harrington, III
patent: 4929565 (1990-05-01), Parrillo

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