Semiconductor memory device with MOS transistors each having...

Details Semiconductor memory device with MOS transistors each having... Semiconductor memory device with MOS transistors each having...

2007-04-24

2007-04-24

Phung, Anh (Department: 2824)

Static information storage and retrieval

Floating gate

Particular connection

C165S185000, C165S200000

Reexamination Certificate

active

11169633

ABSTRACT:
A semiconductor memory device includes a row address transition detector. The semiconductor memory device remedies a fault by replacing a column in a memory cell array with a redundancy bit line. The row address transition detector detects a change in a row address signal for selecting the row direction of the memory cell array. Only when a change in the row address signal is detected by the row address transition detector, the redundancy bit line is sensed.

REFERENCES:
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patent: 5949737 (1999-09-01), Casper et al.
patent: 6525989 (2003-02-01), Mizugaki et al.
patent: 7-37398 (1995-02-01), None
patent: 9-16468 (1997-01-01), None
Wei-Hua Liu, et al., “A 2-Transistor Source-select (2TS) Flash EEPROM for 1.8V-Only Applications”, Non-Volatile Semiconductor Memory Workshop 4.1, 1997, pp. 1-3.

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