Semiconductor memory device with malfunction prevention...

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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C365S189090

Reexamination Certificate

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06977843

ABSTRACT:
A semiconductor memory device has a malfunction prevention device and a nonvolatile memory.The nonvolatile memory is a memory cell including: a gate electrode formed on a semiconductor layer via a gate insulating film; a channel region disposed below the gate electrode; diffusion regions disposed on both sides of the channel region and having a conductive type opposite to that of the channel region; and memory functional units formed on both sides of the gate electrode and having a function of retaining charges.

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patent: 6151255 (2000-11-01), Joo et al.
patent: 6222770 (2001-04-01), Roohparvar
patent: 6597603 (2003-07-01), Lambrache et al.
patent: 05-304277 (1993-11-01), None

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