Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2005-12-20
2005-12-20
Phung, Anh (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S189090
Reexamination Certificate
active
06977843
ABSTRACT:
A semiconductor memory device has a malfunction prevention device and a nonvolatile memory.The nonvolatile memory is a memory cell including: a gate electrode formed on a semiconductor layer via a gate insulating film; a channel region disposed below the gate electrode; diffusion regions disposed on both sides of the channel region and having a conductive type opposite to that of the channel region; and memory functional units formed on both sides of the gate electrode and having a function of retaining charges.
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Hamaguchi Koji
Iwata Hiroshi
Morikawa Yoshinao
Nawaki Masaru
Shibata Akihide
Morrison & Foerster / LLP
Phung Anh
Sharp Kabushiki Kaisha
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