Semiconductor memory device with low-noise structure

Details Semiconductor memory device with low-noise structure Semiconductor memory device with low-noise structure

1986-11-10

1988-09-13

Munson, Gene M.

357 41, 357 54, 357 59, H01L 2978, H01L 2702, H01L 2904, H01L 2934

Patent

active

047713224

ABSTRACT:
A semiconductor memory device which has low noise structure and is operable with high stability.
The memory device employs a plurality of single transistor memory cells each composed of a capacitor and a transistor coupled between one electrode of the capacitor and a bit line, the other electrode of the capacitor being supplied with a predetermined potential. The other electrode is made of a refractory metal, and a relatively low sheet resistance is provided to the other electrode of the capacitor so that the potential fluctuation at the other electrode of the capacitor is suppressed.

REFERENCES:
patent: 4128670 (1978-12-01), Gaensslen
patent: 4329706 (1982-05-01), Crowder et al.
patent: 4488166 (1984-12-01), Lehrer

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