Semiconductor memory device with low-house pads for electron bea

Details Semiconductor memory device with low-house pads for electron bea Semiconductor memory device with low-house pads for electron bea

1989-04-18

1991-06-04

Moffitt, James W.

Static information storage and retrieval

Format or disposition of elements

36523003, 365201, G11C 502, G11C 800, G11C 700

Patent

active

050219987

ABSTRACT:
Disclosed are measurement (observation) pads for judging whether or not a dynamic random access memory (DRAM) adopting a shared sense system is functioning as designed. Concretely, measurement pads are formed by the step of forming a second layer of wiring respectively connected to pairs of complementary data lines which are formed by the step of forming a first layer of wiring, and the signal waveforms of the pairs of complementary data lines are measured using the measurement pads. Further, the measurement pads are provided between wiring layers which become fixed potentials in, at least, the operation of measuring data. In addition, each of the measurement pads is used in common by data lines which are respectively connected to two memory cells located in different memory cell mats.

REFERENCES:
patent: 4628590 (1986-10-01), Udo et al.
patent: 4912052 (1990-03-01), Miyoshi et al.
"Electron Beam Testing Symposium", in Nikkei Microdevice, Jan., 1987, pp. 34-37.

Affiliated with

Also associated with

Rating

Semiconductor memory device with low-house pads for electron bea does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device with low-house pads for electron bea, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device with low-house pads for electron bea will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1032075