Static information storage and retrieval – Powering – Data preservation
Reexamination Certificate
2005-10-25
2005-10-25
Tran, Andrew Q. (Department: 2824)
Static information storage and retrieval
Powering
Data preservation
C365S226000, C365S201000, C365S189090, C365S156000
Reexamination Certificate
active
06958947
ABSTRACT:
A semiconductor memory device which includes an internal voltage generator circuit for adjusting an external power supply voltage and generating first and second internal power supply voltages. The first internal power supply voltage is supplied to a memory cell array via a first power supply line, and the second internal power supply voltage is supplied to a peripheral circuit via a second power supply line. A control circuit controls the internal voltage generator circuit so that the levels of the first and second internal power supply voltages vary depending on a mode of operation.
REFERENCES:
patent: 6037813 (2000-03-01), Eto et al.
patent: 6359459 (2002-03-01), Yoon et al.
patent: 6498760 (2002-12-01), Yamasaki
patent: 6661729 (2003-12-01), Yamasaki
patent: 06349298 (1994-12-01), None
patent: 11185498 (1999-07-01), None
Lee Seung-Min
Noh Yong-Hwan
Park Chul-Sung
Yang Hyang-Ja
Harness & Dickey & Pierce P.L.C.
Samsung Electronics Co. LTD
Tran Andrew Q.
LandOfFree
Semiconductor memory device with internal voltage generators... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory device with internal voltage generators..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device with internal voltage generators... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3472369