Semiconductor memory device with improved capacitor structure

Details Semiconductor memory device with improved capacitor structure Semiconductor memory device with improved capacitor structure

1988-07-18

1990-06-05

Larkins, William D.

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Magnetic bubbles

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365149, 365210, H01L 2704, G11C 1140

Patent

active

049318497

ABSTRACT:
A semiconductor device provided with capacitors which have accurate and reliable capacitance ratio, is disclosed. The semiconductor device comprises first and second capacitors. The first and second capacitors have substantially the same physical configuration but they have different dielectric layers of different values of dielectric constant. Thus, a capacitance ratio of the first capacitor to the second capacitor is determined in accordance with the dielectric constant ratio of the dielectric layers thereof.

REFERENCES:
patent: 4638460 (1987-01-01), Matsumoto
patent: 4641279 (1987-02-01), Kimuna
patent: 4651306 (1987-03-01), Yanagisawa
patent: 4810290 (1989-03-01), Watanabe

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