Semiconductor memory device with floating gate electrode

Details Semiconductor memory device with floating gate electrode Semiconductor memory device with floating gate electrode

1996-05-07

1997-11-11

Nelms, David C.

Static information storage and retrieval

Floating gate

Particular biasing

36518531, 257316, 257326, G11C 1606

Patent

active

056871198

ABSTRACT:
A semiconductor memory device comprises a memory cell having a floating gate electrode for storing an electric charge and a switching a element for charging the floating gate electrode with the electric charge and for performing a switching function so as to discharge the electric charge of the floating gate electrode. A method of manufacturing a semiconductor memory device of this type comprises the steps of forming a field insulating film on a substrate of a first conductivity type; forming an impurity region of a second conductivity type on the substrate in a column direction between a plurality of the field insulating films; forming a first gate insulating film on the substrate; forming a floating gate electrode so that impurity regions of the first conductivity type and second conductivity type are repeated on the first gate insulating film and the field insulating film between a plurality of the impurity regions of the second conductivity type; forming a second gate insulating film on the first gate insulating film; forming a control electrode on the second gate insulating film between the field insulating films in a direction perpendicular with respect to the floating gate electrode; and forming a gate electrode of a passing transistor between a plurality of the control electrodes.

REFERENCES:
patent: 5357464 (1994-10-01), Shukuri
patent: 5557566 (1996-09-01), Ochii

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