Semiconductor memory device with floating gate and method for dr

Details Semiconductor memory device with floating gate and method for dr Semiconductor memory device with floating gate and method for dr

1995-03-09

1995-10-31

Nelms, David C.

Static information storage and retrieval

Floating gate

327316, 327317, 327318, G11C 1134

Patent

active

054635799

ABSTRACT:
A virtual ground array semiconductor memory device includes a matrix of memory cells, which performs writing and erasing operations utilizing FN current, reduces the electric power consumption and the deterioration of a tunnel insulating film. Each memory cell has a floating gate on one side of a channel region and a control gate covering the floating gate and the other side of the channel region.

REFERENCES:
patent: 4328565 (1982-05-01), Harari
patent: 4361847 (1982-11-01), Harari
patent: 4639893 (1987-01-01), Eitan
patent: 4939558 (1990-07-01), Smayling et al.
patent: 5045488 (1991-09-01), Yeh
patent: 5317179 (1994-05-01), Chen et al.
An Asymmetrical Lightly-Doped Source (ALDS) Cell For Virtual ground High Density EPROMs, IEEM, 1988, pp. 432-435.
A Novel Memory Cell Using Flash Array Contactless EPROM (FACE) Technology, IEDM 1990, pp. 91-94.

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