Semiconductor memory device with first and second word line driv

Details Semiconductor memory device with first and second word line driv Semiconductor memory device with first and second word line driv

1988-02-18

1990-08-21

Hecker, Stuart N.

Static information storage and retrieval

Addressing

Particular decoder or driver circuit

36518903, 365204, G11C 700, G11C 800

Patent

active

049512595

ABSTRACT:
A semiconductor memory device is provided which includes a plurality of word line drivers and logic decoding circuitry coupled to the inputs of the word line drivers. In large memory arrays, the word line driver circuits can place large capacitive loads on the output of the logic decoding circuit because the word line driver transistors must be relatively large. This large load on the logic decoding circuitry adversely effects the operating speed of the memory. Accordingly, to reduce this load, a switching arrangement is provided between the output of the logic decoding circuitry and the word line drivers. This switching arrangement can be controlled to respectively connect the output of the logic decoding circuit to the word line drivers based on control output signals of a pre-decoder. Reset MOSFETs can also be provided to prevent the inputs of the word line drivers from floating.

REFERENCES:
patent: 4620299 (1986-10-01), Remington
patent: 4685088 (1987-08-01), Iannucci
patent: 4706222 (1987-11-01), Kwiatkowski et al.
patent: 4719603 (1988-01-01), Shinagawa
patent: 4763304 (1988-08-01), Uesugi

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