Semiconductor memory device with capacitor on opposite surface o

Details Semiconductor memory device with capacitor on opposite surface o Semiconductor memory device with capacitor on opposite surface o

1988-11-28

1990-09-25

Edlow, Martin H.

Fishing, trapping, and vermin destroying

357 55, 437 47, 437 52, H01L 2978

Patent

active

049597094

ABSTRACT:
The present invention provides a semiconductor memory device comprising a MOSFET (16) and a storage capacity element (15) and performing data writing/reading.
The MOSFET (16) is formed on a main surface of a silicon substrate (1) and a storage capacity element (15) is formed on a surface of the reverse side of the silicon substrate (1). The MOSFET (16) comprises source and drain regions (3, 4) formed on the main surface of the silicon substrate (1), a channel region (17) positioned therebetween and a word line forming a gate electrode (9a).
A trench (5) is formed in the surface of the reverse side of the silicon substrate (1) and the storage capacity element (15) comprises an insulating film (2) formed on the whole surface of the reverse side of the silicon substrate (1) including an inner wall surface of this trench, a cell plate electrode (7) formed on the surface of the reverse side of the silicon substrate (1) including the inside of the trench (5), and a diffusion region (13) of a memory cell portion connecting the insulating film (2) and the MOSFET (16).

REFERENCES:
patent: 3882531 (1975-05-01), Michon et al.
patent: 4143389 (1979-03-01), Koike et al.
patent: 4716548 (1987-12-01), Mochizuki
patent: 4792834 (1988-12-01), Uchida

Affiliated with

Also associated with

Rating

Semiconductor memory device with capacitor on opposite surface o does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device with capacitor on opposite surface o, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device with capacitor on opposite surface o will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-332150