Static information storage and retrieval – Magnetic bubbles – Guide structure
Patent
1988-02-01
1988-12-20
Clawson, Jr., Joseph E.
Static information storage and retrieval
Magnetic bubbles
Guide structure
357 2312, 357 41, 357 55, 365149, H01L 2978
Patent
active
047928344
ABSTRACT:
Disclosed is a semiconductor memory device which has a transfer transistor of a MOS structure on a surface of a semiconductor body, and a trenched capacitor having a groove which is formed so as to extend from a surface of the semiconductor body to a certain depth thereof and an electrode which is formed from a bottom portion of the groove to at least a level above an opening of the groove, the source region of the transfer transistor being connected to the electrode of the trenched capacitor and the drain region thereof being connected to a bit line.
REFERENCES:
patent: 4116720 (1978-09-01), Vinson
patent: 4364074 (1982-12-01), Garnache et al.
patent: 4432006 (1984-02-01), Takei
Sunami et al., "A corrugated Capacitor Cell (CCC) for Megabit Dynamic MOS Memories," IEDM Dig. Tech. Papers, pp. 806-808, Dec. 1982.
Mano et al., "Submicron VLSI Memory Circuits," IEEE International Solid-State Circuits Conference, LSSCC Dig. Tech. Papers, pp. 234-235, Feb. 1983.
Minegishi et al., "A Submicron CMOS Megabit Level Dynamic RAM Technology Using Doped Face Trench Capacitor Cell," LEDM Dig. Tech. Papers, pp. 319-322. Dec. 5-7, 1983.
Clawson Jr. Joseph E.
Kabushiki Kaisha Toshiba
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