Semiconductor memory device with an improved substrate back-bias

Details Semiconductor memory device with an improved substrate back-bias Semiconductor memory device with an improved substrate back-bias

1989-07-05

1991-01-15

Popek, Joseph A.

Static information storage and retrieval

Powering

365222, G11C 700

Patent

active

049858696

ABSTRACT:
A substrate back bias voltage generator of a dynamic type RAM is provided with a first voltage generator having a relatively large current supply capacity, a second voltage generator having a relatively small current supply capacity, and a substrate back bias voltage detecting circuit for controlling operation of the first voltage generator. For example, when the dynamic type RAM is in a CAS before RAS refresh mode, the operation of the first voltage generator is limited selectively, and the operation of the second voltage generator and the substrate back bias voltage detecting circuit is stopped selectively.

REFERENCES:
patent: 4775959 (1988-10-01), Sato et al.

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