Semiconductor memory device with an improved memory cell...

Details Semiconductor memory device with an improved memory cell... Semiconductor memory device with an improved memory cell...

2006-01-31

2006-01-31

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S149000, C365S185050

Reexamination Certificate

active

06992928

ABSTRACT:
A semiconductor memory device includes a plurality of memory cells, each of which comprises a single pair of a volatile memory element and a non-volatile memory element, wherein the volatile memory element and the non-volatile memory element are electrically coupled to each other, and wherein the volatile memory element is also electrically coupled to a first bit line for transmitting a first bit signal, while the non-volatile memory element is also electrically coupled to a second bit line making a single pair with the first bit line for transmitting a second bit signal which is an inversion to the first bit signal.

REFERENCES:
patent: 5623442 (1997-04-01), Gotou et al.
patent: 6282118 (2001-08-01), Lung et al.
patent: 7-78484 (1995-03-01), None
patent: 11-126492 (1999-05-01), None

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