Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2006-09-14
2008-10-28
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185180, C365S185240, C365S185280
Reexamination Certificate
active
07443734
ABSTRACT:
In a memory cell array, a plurality of memory cells connected to word lines and bit lines are arranged in a matrix. A storage section stores an initial value of a write voltage corresponding to a first write operation and a correction value for correcting the write voltage. A voltage generating circuit generates a word line write voltage in a first write operation or a second write operation on the basis of the initial value and correction value of the write voltage stored in the storage section.
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Hidalgo Fernando N
Hoang Huan
Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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