Semiconductor memory device with a voltage down converter stably

Details Semiconductor memory device with a voltage down converter stably Semiconductor memory device with a voltage down converter stably

1997-08-19

1999-03-09

Hoang, Huan

Static information storage and retrieval

Powering

365227, 36518909, 327536, G11C 700

Patent

active

058810145

ABSTRACT:
A comparison circuit compares a reference voltage Vref from a reference voltage generation circuit with an internal power supply voltage VCI on an internal power supply line to provide a signal according to the comparison result. A drive transistor supplies current to the internal power supply line from an external power supply node according to the output signal of the comparison circuit. A resistance element connected between the external power supply node and the output node of the comparison circuit and a resistance element connected between the output node of the comparison circuit and a ground node VSS suppresses the amplitude of an output signal of the comparison circuit. Thus, overdrive of the drive transistor can be suppressed, and a current corresponding to an abrupt change of the internal power supply voltage can be supplied from the external power supply node to the internal power supply line by the amplitude limitation function. Thus, an internal power supply voltage generation circuit is provided superior in high frequency response that can generate an internal power supply voltage stably.

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patent: 5604707 (1997-02-01), Kuge et al.
Furuyama et al., "A New On-Chip Voltage Converter for Submicrometer High-Density DRAM's" IEEE Journal of Solid-State Circuits, vol. SC-22, No. 3 (Jun. 1987), pp. 437-441.

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