Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2011-04-12
2011-04-12
Pizarro, Marcos D (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C438S099000, C438S253000
Reexamination Certificate
active
07923719
ABSTRACT:
In the present invention, a semiconductor device that has a nonvolatile memory element to which data can be written at times other than during manufacture and in which forgery and the like performed by rewriting of data can be prevented is provided. In addition, a semiconductor device in which a high level of integration is possible is provided. Furthermore, a semiconductor device in which miniaturization is possible is provided. In a semiconductor device having a memory element that includes a first conductive layer, a second conductive layer, and an organic compound layer interposed between the first conductive layer and the second conductive layer; the second conductive layer is connected to a wiring, formed in the same way as the first conductive layer is formed, through an opening formed in the organic compound layer.
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patent: 6947321 (2005-09-01), Tanabe
patent: 2003/0183699 (2003-10-01), Masui
patent: 2004/0164302 (2004-08-01), Arai et al.
patent: 2006/0157691 (2006-07-01), Lee et al.
patent: 2004-047791 (2004-02-01), None
patent: WO 2006/043573 (2006-04-01), None
Kato Kiyoshi
Nomura Ryoji
Yamazaki Shunpei
Gupta Raj
Pizarro Marcos D
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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