Semiconductor memory device using vertical-channel transistors

Details Semiconductor memory device using vertical-channel transistors Semiconductor memory device using vertical-channel transistors

2005-09-13

2005-09-13

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

C257S302000, C257S331000, C257S333000, C257S351000, C257S377000, C257S393000

Reexamination Certificate

active

06943373

ABSTRACT:
The invention provides a semiconductor memory device comprising a plurality of word lines, a plurality of bit lines, and a plurality of static memory cells each having a first, second, third, fourth, fifth, and sixth transistors. While each of channels of the first, second, third, and fourth transistors are formed vertical against a substrate of the semiconductor memory device. Each of semiconductor regions forming a source or a drain of the fifth and sixth transistors forms a PN junction against the substrate. According to another aspect of the invention, the SRAM device of the invention has a plurality of SRAM cells, at least one of which is a vertical SRAM cell comprising at least four vertical transistors onto a substrate, and each vertical transistor includes a source, a drain, and a channel therebetween aligning in one aligning line which penetrates into the substrate surface at an angle greater than zero degree.

REFERENCES:
patent: 5198683 (1993-03-01), Sivan
patent: 5341327 (1994-08-01), Kuriyama
patent: 5576238 (1996-11-01), Fu
patent: 6204518 (2001-03-01), Adan et al.
patent: 6229161 (2001-05-01), Nemati et al.
patent: 6309930 (2001-10-01), Goebel et al.
patent: 6670642 (2003-12-01), Takaura et al.
patent: 9-232447 (1996-02-01), None
patent: WO00/70622 (1999-05-01), None

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