Semiconductor memory device using only single-channel...

Details Semiconductor memory device using only single-channel... Semiconductor memory device using only single-channel...

2007-10-23

2007-10-23

Le, Thong Q. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S185140, C365S185280

Reexamination Certificate

active

11374045

ABSTRACT:
A semiconductor memory device has a memory cell array, a first transistor of a first conductivity type, a second transistor of a second conductivity type and a third transistor of the first conductivity type. A source or drain of the first transistor is connected to each of word lines. A drain of the second transistor is connected to a gate of the first transistor. A source of the third transistor is connected to the gate of the first transistor. The gates of the second transistor and the third transistor are not connected, a source of the second transistor is not connected to a drain of the third transistor, and the gate of the second transistor and the drain of the third transistor have different voltage levels corresponding to opposite logic levels each other.

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JP Office Action dtd Jul. 24, 2007, JP Appln. 2000-330972.

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