Semiconductor memory device using magneto resistive element...

Details Semiconductor memory device using magneto resistive element... Semiconductor memory device using magneto resistive element...

2005-04-26

2005-04-26

Tran, Michael (Department: 2818)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S257000, C257S295000, C257S421000, C365S158000, C365S171000

Reexamination Certificate

active

06884633

ABSTRACT:
A semiconductor memory device includes a first wiring extending in a first direction, a second wiring extending in a second direction differing from the first direction, and a magneto resistive element arranged between the first and second wirings and including a first portion and a second portion, the second portion being in contact with the second wiring and extending along the second wiring to reach an outside region positioned outside the first portion.

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