Semiconductor memory device using junction short type programmab

Details Semiconductor memory device using junction short type programmab Semiconductor memory device using junction short type programmab

1987-03-10

1989-05-30

James, Andrew J.

Static information storage and retrieval

Magnetic bubbles

Guide structure

365 96, 365103, 357 13, H01L 2702

Patent

active

048355909

ABSTRACT:
A semiconductor memory device using a junction short type programmable element comprises an epitaxial layer formed on a semiconductor substrate, the epitaxial layer having an opposite conductive type to that of the semiconductor substrate, the epitaxial layer being a collector region; a base region having the same conductive type as the substrate formed in the epitaxial layer; a first emitter region having an opposite conductive type to that of the base region, formed in the base region; an insulating isolation region, formed in said epitaxial layer and around the base region; a second emitter region having a higher impurity concentration than that of the first emitter region and the same conductive type as the of the first emitter region, formed in the first emitter region in such a manner that the second emitter region penetrate the first emitter region upward and downward and extends to the interior of the base region (14) so that a writing current flows concentratedly at the second emitter region.

REFERENCES:
patent: 4388703 (1983-06-01), Patch
patent: 4701780 (1987-10-01), Hankins et al.
patent: 4748490 (1988-05-01), Hollingsworth

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