Semiconductor memory device using high-density and high-speed MO

Details Semiconductor memory device using high-density and high-speed MO Semiconductor memory device using high-density and high-speed MO

1989-10-03

1991-02-05

Jackson, Jr., Jerome

357 65, 357 45, H01L 2944, H01L 2710

Patent

active

049909991

ABSTRACT:
A semiconductor memory device in which MOS transistors are used. The device has diffusion lines and polysilicon lines formed on a semiconductor substrate, first and second insulating films covering the diffusion lines and the polysilicon lines, respectively. The diffusion lines extend at intervals and parallel with each other, and constitute bit lines of the memory device. The polysilicon lines extend at intervals, intersect the diffusion lines, and constitute word lines of the memory device. Metal wiring lines are formed on the second insulating film are each positioned over every other diffusion line in such a manner as to extend along the corresponding diffusion line, each metal wiring line being electrically connected to the corresponding diffusion line through a contact hole. Two regions of two adjacent diffusion lines that are underneath the two intersections of these two adjacent diffusion lines and one polysilicon line constitute the source region and the drain region of one MOS transistor, and a portion of the polysilicon line which is between the source region and the drain region constitutes the gate of the MOS transistor. Thus, MOS transistors of the device can be disposed with an increased density, without involving any reduction in the operation speed of the device.

REFERENCES:
patent: 4352031 (1982-09-01), Holbrook et al.
patent: 4707717 (1987-11-01), Hirabayashi et al.

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