Static information storage and retrieval – Powering – Conservation of power
Reexamination Certificate
2011-04-05
2011-04-05
Tran, Andrew Q (Department: 2824)
Static information storage and retrieval
Powering
Conservation of power
C365S228000, C365S226000, C365S189090, C365S189110, C327S539000, C327S538000, C323S313000
Reexamination Certificate
active
07920439
ABSTRACT:
A semiconductor memory device includes a boosting power supply circuit that boosts a first voltage to a second voltage, which is higher than an external power supply. A first bandgap reference (BGR) circuit operates on the second voltage generated by the boosting power supply circuit. Thereby, the power supply circuit generates a voltage by using a bandgap reference circuit.
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Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Tran Andrew Q
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