Semiconductor memory device using a bandgap reference...

Static information storage and retrieval – Powering – Conservation of power

Reexamination Certificate

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Details

C365S228000, C365S226000, C365S189090, C365S189110, C327S539000, C327S538000, C323S313000

Reexamination Certificate

active

07920439

ABSTRACT:
A semiconductor memory device includes a boosting power supply circuit that boosts a first voltage to a second voltage, which is higher than an external power supply. A first bandgap reference (BGR) circuit operates on the second voltage generated by the boosting power supply circuit. Thereby, the power supply circuit generates a voltage by using a bandgap reference circuit.

REFERENCES:
patent: 5303189 (1994-04-01), Devin et al.
patent: 5940322 (1999-08-01), Atsumi
patent: 5986941 (1999-11-01), Pang et al.
patent: 6160391 (2000-12-01), Banba
patent: 2009/0108919 (2009-04-01), Ogiwara et al.
patent: 9-69014 (1997-03-01), None
patent: 11-45125 (1999-02-01), None
patent: WO 98/58382 (1998-12-01), None

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