Semiconductor memory device used for cache memory

Static information storage and retrieval – Associative memories – Ferroelectric cell

Reexamination Certificate

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C365S189070, C711S104000, C711S108000, C714S005110

Reexamination Certificate

active

06898100

ABSTRACT:
A data memory circuit having divided several cache lines storing data, and several entries, and a tag circuit, are provided. The tag circuit having an array of an associative memory including a memory cell circuit having several memory cells storing address corresponding to the data stored in the data memory circuit and divided several rows, and a comparator circuit comparing the address stored in the memory cell circuit with input address, the comparator circuit comparing the address stored in divided several rows of the memory cell circuit with the input address concurrently in each of divided rows storing the address, and generating a cache hit/miss determination signal based on the comparative result of each row, the hit/miss determination signal being supplied to the data memory circuit.

REFERENCES:
patent: 5596521 (1997-01-01), Tanaka et al.
patent: 5752260 (1998-05-01), Liu
patent: 6137707 (2000-10-01), Srinivasan et al.
patent: 6522563 (2003-02-01), Tanaka et al.

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