Semiconductor memory device to reduce off-current in standby...

Details Semiconductor memory device to reduce off-current in standby... Semiconductor memory device to reduce off-current in standby...

2008-12-31

2011-11-29

Lappas, Jason (Department: 2827)

Static information storage and retrieval

Powering

Data preservation

C365S219000, C365S230030, C365S238500

Reexamination Certificate

active

08068377

ABSTRACT:
A semiconductor memory device capable of reducing off-current in a standby mode is provided. The semiconductor memory device includes an enable signal generating unit configured to receive a plurality of address decoding signals and generate a first enable signal to select a first cell block and a second enable signal to select a second cell block, and an internal voltage generating unit for generating an internal voltage by controlling a supply of a first voltage in accordance with the first or second enable signals.

REFERENCES:
patent: 7460429 (2008-12-01), Schoenfeld
patent: 7463057 (2008-12-01), Rahim et al.
patent: 2008/0123423 (2008-05-01), Kim
patent: 2008/0198679 (2008-08-01), Lysinger et al.
patent: 10-2000-0046790 (2000-07-01), None
patent: 10-2001-0005090 (2001-01-01), None
patent: 10-2006-0011409 (2006-02-01), None

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