Semiconductor memory device that can stably perform writing...

Details Semiconductor memory device that can stably perform writing... Semiconductor memory device that can stably perform writing...

2011-08-30

2011-08-30

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Powering

C365S189160, C365S189060, C365S230030, C365S189070, C365S154000, C365S189090, C365S196000

Reexamination Certificate

active

08009500

ABSTRACT:
Cell power supply lines are arranged for memory cell columns, and adjust impedances or voltage levels of the cell power supply lines according to the voltage levels of bit lines in the corresponding columns, respectively. In the data write operation, the cell power supply line is forced into a floating state according to the bit line potential on a selected column and has the voltage level changed, and a latching capability of a selected memory cell is reduced to write data fast. Even with a low power supply voltage, a static semiconductor memory device that can stably perform write and read of data is implemented.

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