Semiconductor memory device that can realize high speed data rea

Details Semiconductor memory device that can realize high speed data rea Semiconductor memory device that can realize high speed data rea

1997-05-08

1998-12-22

Nelms, David C.

Static information storage and retrieval

Addressing

Particular decoder or driver circuit

36523003, 36523008, G11C 800

Patent

active

058525831

ABSTRACT:
Following latching of a word line select signal by a latch circuit, a transfer gate is turned off. When a word line is selected, the voltage applied to the latch circuit is shifted to a desired level to apply a desired voltage to the word line from a word line driver. As a result, a predecode signal is applied to a small size buffering circuit to be transmitted to the word line driver at a potential level between Vcc-GND. Therefore, the parasitic capacitance accompanying a predecode signal is reduced.

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patent: 5612924 (1997-03-01), Miyamoto
patent: 5615164 (1997-03-01), Kirihata et al.
patent: 5621691 (1997-04-01), Park

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