Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – With particular signal path connections
Reexamination Certificate
2007-04-17
2007-04-17
Menz, Doug (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
With particular signal path connections
C257S003000, C257S208000, C257S295000
Reexamination Certificate
active
10880641
ABSTRACT:
A semiconductor memory device includes a first wiring layer, a second wiring layer, a memory cell, and a contact plug. The first wiring layer is formed in an interlayer insulating film. The second wiring layer is formed on the interlayer insulating film. The memory cell includes a first ferromagnetic film formed on the second wiring layer, a tunnel barrier film formed on the first ferromagnetic film, and a second ferromagnetic film formed on the tunnel barrier film. The contact plug is formed on the first wiring layer and connects the first wiring to the second wiring layer, and the upper surface of the contact plug is in a position higher than that of the second wiring layer.
REFERENCES:
patent: 6590244 (2003-07-01), Asao et al.
Roy Scheueriein, et al., “A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in each Cell”, ISSCC 2000/SESSION 7/TD: Emerging Memory & Device Technologies.Paper TA 7.2, 2000, pp. 128-129.
Masashige Sato, et al., “Spin-Valve-Like Properties of Ferromagnetic Tunnel Junctions”, Jpn. J. Appl. Phys, vol. 36, Part 2, No. 2B, Feb. 15, 1997 pp. 200-201.
Kabushiki Kaisha Toshiba
Menz Doug
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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