Semiconductor memory device operating with low current...

Details Semiconductor memory device operating with low current... Semiconductor memory device operating with low current...

2005-03-29

2005-03-29

Hoang, Huan (Department: 2818)

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C365S148000, C365S158000, C365S230060

Reexamination Certificate

active

06873561

ABSTRACT:
In a resistance value variable memory, substrate voltages and/or substrate biases of a digit line drive circuit, a word line drive circuit and a bit line drive circuit for a memory cell array are changed in accordance with an operation mode. A driving power on signal lines connected to memory cells can be increased, and a leakage current during standby can be reduced without increasing a circuit layout area.

REFERENCES:
patent: 6088267 (2000-07-01), Atsumi et al.
patent: 6297686 (2001-10-01), Lin et al.
patent: 6414890 (2002-07-01), Arimoto et al.
patent: 6545931 (2003-04-01), Hidaka
patent: 20030081453 (2003-05-01), Hidaka
patent: 2002-093146 (2002-03-01), None
Stefan K. Lai, “Forefront of Non-Volatile Memory—The Future In Intel's Mind: From Flash Memory to OUM”, Nikkei Microdevices, Mar. 2002, pp. 65-78.

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