Semiconductor memory device, method of driving the same and...

Details Semiconductor memory device, method of driving the same and... Semiconductor memory device, method of driving the same and...

2006-12-01

2010-10-26

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Floating gate

C365S185180, C365S185150, C257S324000, C438S287000

Reexamination Certificate

active

07821823

ABSTRACT:
Disclosed is a semiconductor storage device comprising a semiconductor substrate, a first and a second impurity diffusion layer formed in the semiconductor substrate, a gate insulating film formed on the semiconductor substrate, and a first gate electrode formed on the semiconductor substrate via the gate insulating film. The gate insulating film has a nitrogen-containing silicon oxide film inside, and a silicon oxide film is so arranged on both sides of the nitrogen-containing silicon oxide film as to sandwich the nitrogen-containing silicon oxide film. In addition, the nitrogen composition in the nitrogen-containing silicon oxide film is increased from the semiconductor substrate side to the first gate electrode side.

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