Semiconductor memory device including stacked gate having...

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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Details

C365S185240

Reexamination Certificate

active

07916545

ABSTRACT:
A semiconductor memory device includes memory cells, word lines, a driver circuit, and a control circuit. The driver circuit repeats a programming operation of selecting any one of the word lines, of applying a first voltage to selected one of the word lines, and of applying a second voltage to unselected one of the word lines, to write data to selected one of the memory cells connected to the selected one of the word lines. The control circuit, while the driver circuit is repeating the programming operation, steps up the first voltage and keeps the second voltage constant until the first voltage reaches a first threshold. The control circuit steps up the second voltage after the first voltage has reached the first threshold.

REFERENCES:
patent: 5642309 (1997-06-01), Kim et al.
patent: 2002/0114187 (2002-08-01), Choi et al.
patent: 2007/0025157 (2007-02-01), Wan et al.
patent: 2007/0047326 (2007-03-01), Nguyen et al.
patent: 2007/0109862 (2007-05-01), Kim et al.
patent: 8-96591 (1996-04-01), None
patent: 0142368 (1996-04-01), None

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