Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2011-03-29
2011-03-29
Tran, Michael T (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185240
Reexamination Certificate
active
07916545
ABSTRACT:
A semiconductor memory device includes memory cells, word lines, a driver circuit, and a control circuit. The driver circuit repeats a programming operation of selecting any one of the word lines, of applying a first voltage to selected one of the word lines, and of applying a second voltage to unselected one of the word lines, to write data to selected one of the memory cells connected to the selected one of the word lines. The control circuit, while the driver circuit is repeating the programming operation, steps up the first voltage and keeps the second voltage constant until the first voltage reaches a first threshold. The control circuit steps up the second voltage after the first voltage has reached the first threshold.
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Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Tran Michael T
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