Excavating
Patent
1995-06-07
1998-11-24
Nguyen, Hoa T.
Excavating
371 211, 365200, 365201, G06F 1100, G06F 1116
Patent
active
058419616
ABSTRACT:
In repairing a defective memory cell of a data memory placed in a data memory region, a repairing circuit which employs a repairing method causing some access penalty but having high repairing efficiency is located in a redundant row region and a redundant column region in the data memory region. On the other hand, in repairing a defective memory cell of a tag memory placed in a tag memory region, a repairing circuit which employs a repairing method having low repairing efficiency but causing little access penalty is located in a redundant column region in the tag memory region. Accordingly, optimal repair of a defective memory cell can be achieved according to respective functions of the tag memory and the data memory.
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Kozaru Kunihiko
Sato Hirotoshi
Wada Tomohisa
Mitsubishi Denki & Kabushiki Kaisha
Nguyen Hoa T.
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