Semiconductor memory device in which source line potential...

Details Semiconductor memory device in which source line potential... Semiconductor memory device in which source line potential...

2006-06-06

2006-06-06

Le, Thong Q. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

Reexamination Certificate

active

07057930

ABSTRACT:
There is provided a semiconductor memory device, which realizes rewriting of data in the memory cell by applying a potential difference between the gate and the source, or applying a potential difference between the gate and the drain, which is larger than the power supply voltage. This semiconductor memory device is provided with a source line potential control circuit configured to control the source line potential. The source line potential control circuit sets the source line potential at the time of the mode for programming “1” data in a plurality of blocks in one package to a level lower than at the normal data programming mode.

REFERENCES:
patent: 5337281 (1994-08-01), Kobayashi et al.
patent: 5343434 (1994-08-01), Noguchi
patent: 5615165 (1997-03-01), Tanaka et al.
patent: 5657270 (1997-08-01), Ohuchi et al.
patent: 5774397 (1998-06-01), Endoh et al.
patent: 5798547 (1998-08-01), Urai
patent: 5831903 (1998-11-01), Ohuchi et al.
patent: 6567305 (2003-05-01), Nakamura
patent: 7-169285 (1995-07-01), None

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