Semiconductor memory device in which data in programmable ROM ca

Static information storage and retrieval – Read only systems – Semiconductive

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365 94, 365 63, 365200, G11C 700

Patent

active

059497033

ABSTRACT:
An address storing PROM cell array formed of a PROM having one polysilicon layer stores an address of a defective cell contained in a mask ROM used as a main memory cell array. A data storing PROM cell array formed of a PROM having one polysilicon layer stores data to be written into the defective cell. When an input address hits the address stored in the address storing PROM cell array, an address detecting circuit reads out data stored in the data storing PROM cell array instead of data of the mask ROM. When data in an address corresponding to the defective cell of the mask ROM is rewritten twice or more, a priority setting circuit permits newest data to be preferentially read out.

REFERENCES:
patent: 4376300 (1983-03-01), Tsang
patent: 5179536 (1993-01-01), Kasa et al.

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