Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2008-02-18
2011-11-01
Dickey, Thomas L (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257SE45003, C365S148000
Reexamination Certificate
active
08049204
ABSTRACT:
A semiconductor memory device includes a variable resistance element including a first electrode, a current path forming region, and a second electrode. The current path forming region includes a first region made of a variable resistance material whose resistivity changes by applying voltage, and a second region formed by doping a metal element to the variable resistance material such that a resistivity of the second region is higher than that of the first region and is not changed by applying a voltage used to change the resistivity of the first region. The first region is in contact with the first electrode and the second electrode, and extends from one electrode side to the other electrode side. The second region is provided outside the first region in at least part of the current path forming region in direction extending from one electrode side to the other electrode side.
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J. F. Gibbons et al., “Switching Properties of Thin NiO Films”, Solid-State Electronics Pergamon Press 1964, vol. 7, p. 785-797, 1964.
Dickey Thomas L
NEC Corporation
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