Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2011-04-19
2011-04-19
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Floating gate
Multiple values
C365S185210, C365S185230
Reexamination Certificate
active
07929344
ABSTRACT:
A semiconductor memory device includes a memory cell, a bit line, a source line, a detection circuit, and a sense amplifier. The memory cell holds or more levels of data. The bit line is electrically connected to a drain of the memory cell. The source line is electrically connected to a source of the memory cell. The detection circuit detects a current flowing through the source line during a read operation and a verify operation on the data. The sense amplifier reads the data by sensing a current flowing through the bit line during the read operation and the verify operation. Whether or not the sense amplifier reads the same data plural times is determined according to a current amount detected by the detection circuit.
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Ho Hoai V
Kabushiki Kaisha Toshiba
Norman James G
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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