Semiconductor memory device having silicon nitride overlying onl

Details Semiconductor memory device having silicon nitride overlying onl Semiconductor memory device having silicon nitride overlying onl

1994-06-24

1996-04-30

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

257641, 257649, 257306, H01L 2358

Patent

active

055127797

ABSTRACT:
According to this invention, after a semiconductor nitride film is formed on the entire surface of a semiconductor memory device, the semiconductor nitride film on a memory cell portion is removed. After a semiconductor oxide-based film is formed as an interlayer insulator on the entire surface of the semiconductor memory device, the semiconductor oxide-based film on a peripheral circuit portion is removed using the semiconductor nitride film as a stopper. For this reason, a shallow contact hole is formed in the peripheral circuit portion, and highly reliable wiring can be obtained. In addition, since hydrogen can be supplied to a surface of a semiconductor substrate in the memory cell portion by hydrogen annealing, an interface state on the surface can be eliminated, and the data retention characteristics of the memory cells can be improved.

REFERENCES:
patent: 5005072 (1991-04-01), Gonzalez
patent: 5068697 (1991-11-01), Noda et al.
patent: 5081515 (1992-01-01), Murata et al.
patent: 5100815 (1992-03-01), Tsubone et al.
Smith, W. M. Jr. "Vertical One-Device Memory", IBM Technical Disclosure Bulletin, vol. 15 No. 12, May 1973.

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