Semiconductor memory device having sense amp over-driving...

Details Semiconductor memory device having sense amp over-driving... Semiconductor memory device having sense amp over-driving...

2008-01-08

2008-01-08

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Addressing

Plural blocks or banks

C365S205000

Reexamination Certificate

active

07317653

ABSTRACT:
The present invention relates to a semiconductor memory device in which current consumption incurred by excessive over-driving can be prevented by dividing a memory core region into a plurality of memory blocks and then over-driving only sense amplifiers of a corresponding memory block.

REFERENCES:
patent: 6459639 (2002-10-01), Nishimura
patent: 1020010063908 (2001-07-01), None
patent: 1020030048291 (2003-06-01), None

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