Semiconductor memory device having protection against alpha stri

Fishing – trapping – and vermin destroying

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437 52, 437225, H01L 21331

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active

049544551

ABSTRACT:
The invention comprises an improved bipolar memory device having enhanced protection against the effects of alpha particles comprising at least one memory cell having a buried layer forming at least a portion of the collector of one of the transistors in the memory cell, said buried layer being located sufficiently close to a base layer in only the memory portion of the device to provide a sufficiently high capacitance between said buried layer and said base layer to prevent the occurrence of a soft error caused by an alpha particle striking the structure without interfering with the speed of the device.

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Maheaux, "Transistor . . . ", IBM TDB vol. 11, #12, May '69, pp. 1690-1691.

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